Date of this Version
High resolution and cross-sectional transmission electron microscopy (HRTEM, XTEM) were used to characterize common defects in wurtzite GaN nanowires grown via the vapor-liquid-solid (VLS) mechanism. High resolution transmission electron microscopy showed that these nanowires contained numerous (001) stacking defects interspersed with cubic intergrowths. Using cross-sectional transmission electron microscopy, bicrystalline nanowires were discovered with two-fold rotational twin axes along their growth directions, and were concluded to grow along high index directions or vicinal to low index planes. A defect-mediated VLS growth model was used to account for the prevalence of these extended defects. Implications for nanowire growth kinetics and device behavior are discussed.
Tham, D., Nam, C., & Fischer, J. E. (2006). Defects in GaN Nanowires. Retrieved from https://repository.upenn.edu/mse_papers/114
Date Posted: 05 December 2006
This document has been peer reviewed.