Date of this Version
This paper reports, for the first time, on the demonstration of low voltage and functionally complete logic elements (NAND and NOR) implemented by using body-biased complementary and ultra-thin (250 nm thick) Aluminum Nitride (AlN) based piezoelectric mechanical switches. This work presents, firstly, the importance of scaling AlN films for the demonstration of ultra-thin AlN switches and, secondly, the implementation of a new actuation scheme based on body biasing to lower the switch threshold voltage. Four of these ultra-thin switches were connected together to synthesize functionally complete MEMS logic gates (NAND and NOR) with a ± 2V swing and a body-bias voltage < 8 V.
Sinha, Nipun; Jones, Timothy; Guo, Zhijun; and Piazza, Gianluca, "Demonstration of Low Voltage and Functionally Complete Logic Operations Using Body-Biased Complementary and Ultra-Thin ALN Piezoelectric Mechanical Switches" (2010). Departmental Papers (MEAM). 258.
Date Posted: 09 November 2010