Departmental Papers (MEAM)

Document Type

Conference Paper

Date of this Version

2010

Comments

Suggested Citation:
Nipun Sinha, Timothy S. Jones, Zhijun Guo, and Gianluca Piazza. "DEMONSTRATION OF LOW VOLTAGE AND FUNCTIONALLY COMPLETE LOGIC OPERATIONS USING BODY-BIASED COMPLEMENTARY AND ULTRA-THIN ALN PIEZOELECTRIC MECHANICAL SWITCHES" Proceedings of 2010 MicroElectroMEchanical Systems Conference (MEMS 2010) (2010).

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Abstract

This paper reports, for the first time, on the demonstration of low voltage and functionally complete logic elements (NAND and NOR) implemented by using body-biased complementary and ultra-thin (250 nm thick) Aluminum Nitride (AlN) based piezoelectric mechanical switches. This work presents, firstly, the importance of scaling AlN films for the demonstration of ultra-thin AlN switches and, secondly, the implementation of a new actuation scheme based on body biasing to lower the switch threshold voltage. Four of these ultra-thin switches were connected together to synthesize functionally complete MEMS logic gates (NAND and NOR) with a ± 2V swing and a body-bias voltage < 8 V.

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Date Posted: 09 November 2010