Date of this Version
This paper reports on the first demonstration of aluminum nitride (AIN) piezoelectric logic switches that were fabricated with ultra-thin (100nm) AIN films and exhibit a 1 mV threshold voltage via the body-biasing scheme. The application of a relatively low (< 6 V) fixed potential to the body terminal of a 4-terminal switch has been cycled to > 109 cycles and, although the contact resistance was found to be high (~ 1 MΩ), the nano-films have functioned throughout to show high piezoelectric nano-film reliability.
Sinha, Nipun; Guo, Zhijun; Felmetsger, Valery V.; and Piazza, Gianluca, "100 NM Thick Aluminum Nitrade Based Piezoelectric Nano Switches Exhibiting 1 MV Threshold Voltage via Body-Biasing" (2010). Departmental Papers (MEAM). 256.
Date Posted: 09 November 2010
This document has been peer reviewed.