Departmental Papers (ESE)


This paper reports on the first demonstration of a single multiplexed CMOS oscillator circuit employed as direct frequency readout for an array of 8 nanoscaled aluminum nitride Contour-Mode Resonant Sensors (CMR-S). In this first prototype 8 thin-film (250 nm) AlN CMR-S operating at 186 MHz were fabricated on the same chip and simultaneously wire-bonded to a Pierce-like oscillator circuit (fabricated in the ON Semiconductor 0.5 µm CMOS process) by means of 8 CMOS transmission gates addressed via a 3 bit on-chip decoder. The 8 CMR-S were simultaneously exposed to different concentrations of methanol (0.1–1% of the saturated vapor pressure) and their response was monitored in a time-multiplexed mode. Frequency shifts of 300 Hz corresponding to changes of mass per unit area of 7 ag/µm2 were experimentally detected. Values of phase noise derived Allan deviation as low as 0.9 Hz were measured. Such Allan deviation translates in an estimated limit of detection of 21 zg/µm2.

Document Type

Conference Paper

Date of this Version



Suggested Citation:
Rinaldi, Matteo; Zuniga, Chiara; Duick, Brandon; Piazza, Gianluca; , "Use of a single multiplexed CMOS oscillator as direct frequency read-out for an array of eight AlN Contour-Mode NEMS Resonant Sensors," Sensors, 2010 IEEE , vol., no., pp.2666-2670, 1-4 Nov. 2010.

©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.



Date Posted: 27 January 2011

This document has been peer reviewed.