Departmental Papers (ESE)

Abstract

An analysis of the channel thermal noise in MOSFET's, based on the one-dimensional charge sheet model, is presented. The analytical expression is valid in the strong, moderate, and weak inversion regions. The body effect on the device parameters relevant to the thermal noise is discussed. A measurement technique as well as experimental results of P- and N-MOSFET's of a 1.2 µm radiation hard CMOS process are presented. The calculated channel thermal noise coefficient gamma as in id2/Δf=4kT γ gdo agrees well with experimental data for effective device channel length as short as 1.7µm.

Document Type

Journal Article

Date of this Version

11-1-1994

Comments

Copyright 1994 IEEE. Reprinted from IEEE Transactions on Electron Devices, 1994, Volume 41, Issue 11, November 1994, pages 2069-2075.
Publisher URL: 10.1109/16.333824

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Keywords

radiation hard CMOS, noise measurement.

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Date Posted: 27 June 2007

This document has been peer reviewed.