A promising p-type transparent conducting material: Layered oxysulfide
wide band gap semiconductors
Sr3Cu2Sc2O5S2, a layered oxysulfide, composed of anti-PbO-like [Cu2S2] slabs alternating with perovskitelike [Sr3Sc2O5] slabs, was systematically studied as a p-type transparent conducting material. The material has a wide energy gap of 3.1 eV and a p-type electrical conductivity of 2.8 S cm−1 at room temperature. The hole mobility of +150 cm2 V−1 S−1 at room temperature, which is much higher than the typical value of ~10−1–10 cm2 V−1 S−1 found in other copper compounds. The performances of bulk undoped Sr3Cu2Sc2O5S2 show the promise of copper oxysulfides as a class of p-type transparent conductive materials that is essential for optoelectronic applications.