THE EFFECT OF HYDROGEN ON PALLADIUM - METAL-OXIDE-SILICON CAPACITORS (INTERFACE STATES, CAPACITANCE, CONDUCTANCE, CHEMICAL SENSORS, DIFFUSION)
A palladium gate is used to inject hydrogen into a Pd-oxide-silicon capacitor by exposure to hydrogen gas. The hydrogen can be removed reversibly from the Pd-MOSCAP by exposure to oxygen at the measurement temperature. The admittance-frequency characteristics are measured at temperature in the ambient. Results are presented which demonstrate that hydrogen injected from the Pd can diffuse through a thermally grown oxide and into the silicon substrate. A change in the conductance is observed which is a result of the hydrogen injected to the oxide-silicon interface. A thermally oxidized n-type wafer with a boron implant extending 100nm below the oxide is used to demonstrate hydrogen diffusion into the silicon. Capacitance measurements in hydrogen reveal that the boron acceptors have been electrically deactivated. The effect is reversible by exchanging hydrogen and oxygen gases. The change in the conductance characteristics is analyzed using the conductance method. It is concluded that there is a change in the state density and the electron capture probability due to the hydrogen. Results are compared for samples of different fabrication techniques. The results are discussed in light of present models.
FARE, THOMAS LOUIS, "THE EFFECT OF HYDROGEN ON PALLADIUM - METAL-OXIDE-SILICON CAPACITORS (INTERFACE STATES, CAPACITANCE, CONDUCTANCE, CHEMICAL SENSORS, DIFFUSION)" (1985). Dissertations available from ProQuest. AAI8523410.