Departmental Papers (CBE)
Document Type
Journal Article
Date of this Version
November 2006
Abstract
The density and spatial distribution of oxide precipitates within a crystalline silicon wafer is of paramount importance for microelectronic device yield. In this letter, the authors show how the formation of previously unconsidered, very small vacancy aggregates can explain macroscopic spatial variations in the oxide precipitate density, which are observed following certain rapid thermal annealing conditions. The formation of these nanometer-sized voids is predicted on the basis of their recent model for vacancy aggregation that accounts for high temperature entropic effects.
Recommended Citation
Frewen, T. A., & Sinno, T. (2006). Vacancy Self-trapping During Rapid Thermal Annealing of Silicon Wafers. Retrieved from https://repository.upenn.edu/cbe_papers/82
Date Posted: 08 December 2006
This document has been peer reviewed.
Comments
Postprint version. Published in Applied Physics Letters, Volume 89, Issue 19, Article 191903, November 2006, 3 pages.