Departmental Papers (CBE)

Document Type

Journal Article

Date of this Version

November 2006


The density and spatial distribution of oxide precipitates within a crystalline silicon wafer is of paramount importance for microelectronic device yield. In this letter, the authors show how the formation of previously unconsidered, very small vacancy aggregates can explain macroscopic spatial variations in the oxide precipitate density, which are observed following certain rapid thermal annealing conditions. The formation of these nanometer-sized voids is predicted on the basis of their recent model for vacancy aggregation that accounts for high temperature entropic effects.


Postprint version. Published in Applied Physics Letters, Volume 89, Issue 19, Article 191903, November 2006, 3 pages.



Date Posted: 08 December 2006

This document has been peer reviewed.