Departmental Papers (CBE)
Document Type
Journal Article
Date of this Version
12-5-2008
Abstract
The role of entropy in the thermodynamic properties of small interstitial clusters in crystalline silicon is investigated using an empirical potential. It is shown that both vibrational and configurational entropies are potentially important in setting the properties of small silicon interstitial clusters and, in particular, contribute to the formation of “magic” sizes that exhibit special stability, which have been inferred by experimental measurements of dopant diffusion. The results suggest that a competition between formation energy and entropy of small clusters could be linked to the selection process between various self-interstitial precipitate morphologies observed in ion-implanted crystalline silicon.
Recommended Citation
Kapur, S., & Sinno, T. (2008). Entropic Origins of Stability in Silicon Interstitial Clusters. Retrieved from https://repository.upenn.edu/cbe_papers/141
Date Posted: 11 January 2011
This document has been peer reviewed.
Comments
Suggested Citation:
Kapur, S.S. and T. Sinno. (2008). "Entropic origins of stability in silicon interstitial clusters." Applied Physics Letters. 93, 221911.
© 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.3042096.