Atomic Layer Deposition (ALD) film characterization
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Quattrone Nanofabrication Facility
Quattrone Nanofabrication Facility
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Abstract
This report shows deposition characteristics for aluminum oxide (Al2O3), hafnium oxide (HfO2), and titanium dioxide (TiO2) films deposited in the Cambridge Nanotech Savannah system. A brief study of the presence of pinholes in these films is also presented.
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2016-04-28