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Submissions from 2017

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Characterization of Sputtering Copper Using the Denton Explorer-14 System, Roman Mays

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Characterization of Sputtering Platinum Using the Denton Explorer-14 System, Roman Mays

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Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Dioxide (SiO2) Using Oxford Instruments System 100 PECVD, Meredith Metzler and Raj Patel

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Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Nitride (SiNx) Using Oxford Instruments System 100 PECVD, Meredith Metzler and Raj Patel

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Optimization of Plasma Enhanced Chemical Vapor Deposition (PECVD) of Amorphous Silicon (a-Si) Using Oxford Instruments System 100 with Taguchi L9 Based Design of Experiments (DOE), Raj Patel and Meredith Metzler

Submissions from 2016

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Spin Curves for MicroChem S1800 (1805, 1813, 1818) Series Positive Resist, Mohsen Azadi and Gerald G. Lopez

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Reactive Ion Etch (RIE) of Silicon Dioxide (SiO2) with Tetrafluoromethane (CF4), Meredith Metzler

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Reactive Ion Etch (RIE) of Silicon Dioxide (SiO2) with Trifluoromethane and Oxygen (CHF3/O2), Meredith Metzler

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Reactive Ion Etch (RIE) of Silicon Nitride (SiNx) with Tetrafluoromethane (CF4), Meredith Metzler

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Reactive Ion Etch (RIE) of Silicon Nitride (SiNx) with Trifluoromethane and Oxygen (CHF3/O2), Meredith Metzler

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Atomic Layer Deposition (ALD) film characterization, Meredith Metzler and Yichen Lu

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Reactive Ion Etch (RIE) of Silicon and ZEP520A Resist Mask with Tetrafluoromethane (CF4) Using Oxford 80 Plus, Steven Wood, Gerald G. Lopez, and Meredith Metzler

Submissions from 2015

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Performance Check 1 on MA6 Mask Aligner, Jonathan Bryan

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1. Dry Etching of SiO2, SiNx, and Si using 80plus Reactive Ion Etcher, Prashanth Gopalan

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Performance Check 1 on Elionix E-beam writer, Jisoo Kang

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Deep Silicon Etching using TRION, Zisong Nie

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Deposition Rate and Surface Roughness of Ti films prepared by Explorer14 Magnetron Sputterer, Zisong Nie

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Deposition Rate, Surface Roughness, Morphology, and Film Stress of Al films prepared by Explorer14 Magnetron Sputterer, Zisong Nie

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Film Stress of Ti film prepared by PVD75 e-beam evaporator, Zisong Nie

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Growth rates and Pinholes of ALD SiO2, Al2O3, TiO2, and HfO2 films, Zisong Nie

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Surface Roughness and Morphology of Au film prepared by PVD75 e-beam evaporator, Zisong Nie

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Surface Roughness of ALD films, Zisong Nie

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Temperature dependence of ALD SiO2 growth, Zisong Nie

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Thickness and Permeability (against XeF2) of Parylene C film using Parylene Coater, Zisong Nie

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Al (confocal) deposition rate 1 using Explorer14 magnetron sputterer, Swapil Paliwal

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Deposition rate of Ti film prepared by Explorer14 magnetron Sputterer, Swapil Paliwal

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Thicknesses and Pinholes of SiO2, SiNx, and a-Si Films prepared by PECVD, No 1, Swapil Paliwal

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Film stress of Ti films prepared by Explorer14 Magnetron Sputterer, Swapil Paliwal and Zisong Nie

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Preparation of High Stress Silicon Nitride film using PECVD, Chia-Hsing Pi

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Atomic Layer Deposition-1, growth rate and uniformity of Al2O3, Dhruv Turakhia

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Deposition Rates 2 on PVD75 DC/RF Magnetron Sputterer, Dhruv Turakhia

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Deposition Rates 3 on PVD75 DC/RF Magnetron Sputterer, Dhruv Turakhia

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Deposition Rates on PVD75 Magnetron Sputterer, Dhruv Turakhia

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Thicknesses and Pinholes of SiO2, SiNx, and a-Si Films prepared by PECVD, No 2, Dhruv Turakhia

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Thickness Measurement on Ti, Au, Pd, and Cr using PVD75 E-beam Evaporator, Dhruv Turakhia

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2. Dry Etching of SiO2, SiNx, and Si using 80plus Reactive Ion Etcher, Meet Vora

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Statistical Process Control of 80plus Reactive Ion Etcher, Hiromichi Yamamoto

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Statistical Process Control of Alignment Module of NX2600, Hiromichi Yamamoto

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Statistical Process Control of PECVD, Hiromichi Yamamoto

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Performance Check on ABM3000HR Mask Aligner, Lin Zhao and Prashanth Gopalan