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    Temperature dependence of ALD SiO2 growth
    (2015-04-25) Nie, Zisong
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  • Publication
    Thin Dry Silicon Oxide Films Grown by Thermal Oxidation
    (2020-03-18) Muduli, Manisha; Yamamoto, Hiromichi
    Dry thermal oxidation is performed at 900, 950, 1000, and 1050 C in fused silica tube furnace (Sandvik) for 10, 20, 50, 100 and 200 min. The results are analyzed by both of Deal-Grove model and the method of Gerlach, Maser, and Saad. In the analysis using the Deal-Grove model, the parabolic rate constants are obtained to be 2.1, 7.0, 17.5, and 42.4 nm^2/min at 900, 950, 1000, and 1050 C, respectively, and the linear rate constants are acquired to be 0.2, 0.4, 0.8, and 1.2 nm/min at 900, 950, 1000, 1050 C, respectively. Activation energies of the parabolic rate constant and the linear rate constant are obtained to be 2.67 and 1.55 eV, respectively. In the analysis using the method of Gerlach, Maser, and Saad, the activation energy of the oxide growth rate for the 5 nm thick oxide is obtained to be 2.49 eV, whereas that for the 40 nm thick oxide to be 1.93 eV. The film uniformity for 30 nm thickness shows more than 10%, while that for the thickness of more than 50 nm indicates less than 5%, suggesting that measurement on 30 nm thick film using Filmetrics F50 is not still accurate enough. Standard deviation and coefficient of variation are also examined to discuss the film uniformity.
  • Publication
    Influence of flow rate, nozzle speed, pitch and the number of passes on the thickness of S1805 photoresist in SUSS MicroTec AS8 spray coater
    (2019-10-15) Sanghvi, Rohan; Kim, Gyuseok
    S1805 positive photoresist has been deposited on single crystalline Si wafers using a Suss MicroTec Alta Spray. The influence of flow rate, nozzle speed, pitch and number of passes on the thickness of the photoresist was studied. Results show that the thickness of S1805 is linearly proportional to the flow rate and number of passes, and inversely proportional to the nozzle speed and pitch.
  • Publication
    Optimization of Ultrasonic Aluminum Wire Bonding on Chromium and Gold Surfaces Using K&S Wedge Wire Bonder
    (2019-10-25) Tetro, Ryan; Kim, Gyuseok
    Ultrasonic wire bonding of aluminum wire has been carried out onto gold and chromium surfaces using K&S wedge wire bonder (Model: 4523). Three distinct settings, power, time, and force were varied to find and propose the optimal process parameters for strong mechanical and electrical bond between the Al wire and the Cr and Au surfaces. It turned out that the range of optimal process windows for bonding onto a Cr surface is much smaller than bonding onto an Au surface. The range of power, time, and force for Cr are 3.0 - 3.5, 3.0 - 5.0, and 2.0 - 3.0 ± 1.0, respectively. To the contrary, the range of power, time, and force for Au are 2.5 - 4.0, 4.0 - 5.0 ± 1.0, and 3.0 - 4.0 ± 1.0, respectively.
  • Publication
    Characterization and Optimization of Parylene-C deposition process using SCS Parylene coater
    (2019-01-15) Hastings, Hannah; Johnston, Eric D; Kim, Gyuseok
    Parylene-C has been deposited on bare Si wafers by physical vapor deposition using the SCS Coating Systems. Results show a 12 µm thick Parylene-C film with 10 g of dimer and negligible thickness variation across a wafer. We find a positive linear relationship between film thickness and mass of dimer at a range of 1 g to 18 g. However, the Al boat for dimer was burnt with 18 g of dimer, suggesting multiple depositions with 1 g to 10 g of dimer are recommended to achieve the Parylene-C film thicker than 12 µm.
  • Publication
    Alignment Error Examination of Elionix E-Beam Writer ELS-7500EX
    (2018-05-01) Li, Yangshanshan
    The alignment error of Elinox ELS-7500EX E-beam Lithography system is examined, as a project of Graduate Student Fellow Program. This report shows the alignment error of 60 and 30 nm in the x- and y-direction, respectively, confirming the tool specification of 60 nm alignment error.
  • Publication