Effect of Developer Temperature on Photoresist Contrast in Grayscale Lithography

Loading...
Thumbnail Image
Penn collection
Protocols and Reports
Quattrone Nanofabrication Facility
Degree type
Discipline
Subject
Photoresist
SPR 220
contrast
developer
temperature
grayscale
lithography
Biochemical and Biomolecular Engineering
Bioelectrical and Neuroengineering
Biomaterials
Biomechanical Engineering
Biomedical
Biomedical Devices and Instrumentation
Biomedical Engineering and Bioengineering
Chemical Engineering
Electrical and Computer Engineering
Electrical and Electronics
Electromagnetics and Photonics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Engineering Education
Engineering Mechanics
Engineering Science and Materials
Materials Science and Engineering
Mechanical Engineering
Mechanics of Materials
Nanotechnology Fabrication
Polymer and Organic Materials
Process Control and Systems
Semiconductor and Optical Materials
VLSI and Circuits, Embedded and Hardware Systems
Funder
Grant number
License
Copyright date
Distributor
Related resources
Contributor
Abstract

SPR 220-3 photoresist was spin-coated onto a silicon wafer, exposed using a Heidelberg DWL66+ laserwriter at different laser powers, and developed at different temperatures. The effect of developer temperature on photoresist contrast was examined. Results show that increasing developer temperature decreased photoresist contrast and increased required dose.

Advisor
Date Range for Data Collection (Start Date)
Date Range for Data Collection (End Date)
Digital Object Identifier
Series name and number
Publication date
2021-05-12
Volume number
Issue number
Publisher
Publisher DOI
Journal Issue
Comments
Recommended citation
Collection