Document Type

Technical Report

Date of this Version

10-6-2016

Facility

Quattrone Nanofabrication Facility

Abstract

This technical report examines the silicon etch process using the SPTS Rapier Si DRIE system and highlights the difference in etch properties between small (~10 micron) and large (~500 micron) features.

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Date Posted: 06 October 2016

 

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