Document Type

Technical Report

Date of this Version

9-2-2016

Facility

Quattrone Nanofabrication Facility

Abstract

This report describes KOH etching of (100) Si wafer through a hard mask of silicon oxide, and reveals that the scattered etch rate is ascribed to the etch rates of the different crystal planes exposed during the etching.

Creative Commons License

Creative Commons Attribution-Share Alike 4.0 License
This work is licensed under a Creative Commons Attribution-Share Alike 4.0 License.

Keywords

KOH etching Silicon

 

Date Posted: 02 September 2016

 

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