ScholarlyCommons: Repository

Title

Controlled Doping of Graphene Using Ultraviolet Irradiation

Author(s)

Zhentang Luo, Hong Kong University of Science and Technology
Nicholas J. Pinto, University of Puerto Rico - Humacao
Yarely Davila, University of Puerto Rico - Humacao
A.T. Charlie Johnson Jr., University of PennsylvaniaFollow

Document Type

Journal Article

Date of this Version

6-20-2012

Comments

Luo, Z., Pinto, N. J., Davila, Y., & Johnson, A. T. C. (2012). Controlled doping of graphene using ultraviolet irradiation. Applied Physics Letters, 100(25), 253108. doi: 10.1063/1.4729828

© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 100, 253108 (2012) and may be found at http://dx.doi.org/10.1063/1.4729828

Abstract

The electronic properties of graphene are tunable via doping, making it attractive in low dimensional organic electronics. Common methods of doping graphene, however, adversely affect charge mobility and degrade device performance. We demonstrate a facile shadow mask technique of defining electrodes on graphene grown by chemical vapor deposition (CVD) thereby eliminating the use of detrimental chemicals needed in the corresponding lithographic process. Further, we report on the controlled, effective, and reversible doping of graphene via ultraviolet (UV) irradiation with minimal impact on charge mobility. The change in charge concentration saturates at ~2 x 10¹²cm^-2 and the quantum yield is 10^-5 e/photon upon initial UV exposure. This simple and controlled strategy opens the possibility of doping wafer-size CVD graphene for diverse applications.