Date of this Version
High quality silicon nanowires (SiNWs) were synthesized via a thermal evaporation method without the use of catalysts. Scanning electron microscopy and transmission electron microscopy showed that SiNWs were long and straight crystalline silicon with an oxide sheath. Field effect transistors (FETs) were fabricated to investigate the electrical transport properties. Devices on as-grown material were p-channel with channel mobilities 1 - 10 cm2 V-1 s-1. Post-growth vapor doping with bismuth converted these to n-channel behavior.
Byon, K., Tham, D., Fischer, J. E., & Johnson, A. T. (2005). Synthesis and Post-growth Doping of Silicon Nanowires. Retrieved from http://repository.upenn.edu/mse_papers/81
Date Posted: 29 March 2006
This document has been peer reviewed.