Departmental Papers (MSE)

Document Type

Journal Article

Date of this Version

November 2005

Comments

Postprint version. Published in Applied Physics Letters, Volume 87, Issue 19, Article 193104, November 7, 2005, 5 pages.
Publisher URL: http://dx.doi.org/10.1063/1.2128070

Abstract

High quality silicon nanowires (SiNWs) were synthesized via a thermal evaporation method without the use of catalysts. Scanning electron microscopy and transmission electron microscopy showed that SiNWs were long and straight crystalline silicon with an oxide sheath. Field effect transistors (FETs) were fabricated to investigate the electrical transport properties. Devices on as-grown material were p-channel with channel mobilities 1 - 10 cm2 V-1 s-1. Post-growth vapor doping with bismuth converted these to n-channel behavior.

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Date Posted: 29 March 2006

This document has been peer reviewed.