Departmental Papers (MSE)

Document Type

Conference Paper

Date of this Version

November 2004

Comments

Copyright Materials Research Society. Reprinted from MRS Proceedings Volume 832.
2004 Fall Meeting Symposium F
Group-IV Semiconductor Nanostructures
Publisher URL: http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2689&DID=114852&action=detail

Abstract

The electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n- and p-channel FET devices.

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Date Posted: 24 March 2006