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The electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n- and p-channel FET devices.
Byon, K., Fischer, J. E., Adu, K. W., & Eklund, P. C. (2004). Silicon Nanowires: Doping Dependent N- And P- Channel FET Behavior. Retrieved from http://repository.upenn.edu/mse_papers/80
Date Posted: 24 March 2006