Departmental Papers (MSE)

Document Type

Journal Article

Date of this Version

November 2008

Comments

© 2008 American Institute of Physics. Reprinted from Applied Physics Letters, Volume 93, Issue 19, November 13, 2008, Article 192913.
Publisher URL: http://dx.doi.org/10.1063/1.2995861

Abstract

High density fine grain (1−x)BiScO3xPbTiO3 ceramics were successfully prepared by two-step sintering and their ferroelectric properties were investigated. Experimental evidence indicates the existence of a morphotropic phase boundary at the composition zx=0.635, which exhibits a piezoelectric coefficient d33 of 700 pC/N at room temperature, significantly higher than the reported values to date. Furthermore, a higher electromechanical coupling factor Kp=0.632 and a larger remnant polarization Pr=47.3 µC/cm2 were obtained. The paraelectric-to-ferroelectric phase transition occurs at 446 °C, slightly lower than in the coarse grain ceramics with a similar composition, suggesting a grain size effect. The local effective piezoelectric coefficient d33* was estimated to be 795 pC/N at 2.29 V, measured by scanning probe microscopy. Further atomic force microscope observation revealed the existence of 90° domains of about 60–70 nm in width, confirming the previous results that small domain structure enhances the piezoelectric properties.

Keywords

bismuth compounds, dielectric polarisations, electric domains, ferroelectric ceramics, ferroelectric transmissions, grain size, lead compounds, piezoceramics, piezoelectricity, scanning probe microscopy, sintering



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Date Posted: 11 December 2008

This document has been peer reviewed.