Departmental Papers (MSE)
Document Type
Journal Article
Date of this Version
July 2006
Abstract
A novel relaxation phenomenon occurs in buried SrRuO3 layers in strained (Ca1-xSrx) (Zr1-xRux)O3/SrRuO3/SrTiO3 (001) thin film system. The lightly strained SrRuO3 buried layer is initially clamped by the SrTiO3 substrate. After a heavily strained (Ca1-xSrx) (Zr1-xRux)O3 overlayer is deposited, localized strain relaxation develops in the buried layer. This is manifested by a crosshatch pattern of 〈100〉 corrugations on the surface, due to the slip of 〈100〉 {100} threading dislocations. The phenomenon can be controlled by tuning the growth kinetics and strain energy of the overlayer.
COinS
Date Posted: 27 November 2006
This document has been peer reviewed.
Comments
Copyright American Physical Society. Reprinted from Applied Physics Letters, Volume 89, Issue 3, Article 031905, July 2006, 5 pages.
Publisher URL: http://dx.doi.org/10.1063/1.2221900