AlN Contour-Mode Resonators for Narrow-Band Filters above 3 GHz

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Departmental Papers (ESE)
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Super High Frequency
MEMS Resonator
MEMS Filter
NEMS
Electrical and Electronics
Electronic Devices and Semiconductor Manufacturing
Nanoscience and Nanotechnology
Nanotechnology Fabrication
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This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super high frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) aluminum nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5 %. These devices were employed to synthesize the highest frequency ever reported MEMS filter (3.7 GHz) based on AlN contour-mode resonator (CMR) technology.

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2009-04-20
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Departmental Papers (ESE)
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2023-05-17T03:25:30.000
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Copyright 2009 IEEE. Reprinted from: Rinaldi, M.; Zuniga, C.; Chengjie Zuo; Piazza, G., "AlN contour-mode resonators for narrow-band filters above 3 GHz," Frequency Control Symposium, 2009 Joint with the 22nd European Frequency and Time forum. IEEE International , vol., no., pp.70-74, 20-24 April 2009 Publisher URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=5168144&isnumber=5168107 Digital Object Identifier: 10.1109/FREQ.2009.5168144 This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
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