Departmental Papers (ESE)
Document Type
Conference Paper
Date of this Version
6-21-2009
Abstract
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ 0.35%) and high off-band rejection (~ 35 dB) were achieved at an operating frequency of 1.96 GHz. This first prototype showed insertion loss of 11 dB, which can be improved to few dB if parasitic elements are eliminated or device capacitance is increased.
Keywords
Contour-Mode Resonators, MEMS Resonators, MEMS Filters, NEMS
Included in
Electrical and Electronics Commons, Electronic Devices and Semiconductor Manufacturing Commons, Nanoscience and Nanotechnology Commons, Nanotechnology fabrication Commons
Date Posted: 11 January 2010
Comments
Copyright 2009 IEEE. Reprinted from:
Rinaldi, M.; Zuniga, C.; Zuo, C.; Piazza, G., "Ultra-thin Super High Frequency two-port ALN contour-mode resonators and filters," Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International , vol., no., pp.577-580, 21-25 June 2009
Publisher URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=5285390&isnumber=5285368
Digital Object Identifier: 10.1109/SENSOR.2009.5285390
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