Analytical and Experimental Studies of Thermal Noise in MOSFET's

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radiation hard CMOS
noise measurement.
Electrical and Computer Engineering
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Tedja, Suharli
Williams, Hugh H.
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An analysis of the channel thermal noise in MOSFET's, based on the one-dimensional charge sheet model, is presented. The analytical expression is valid in the strong, moderate, and weak inversion regions. The body effect on the device parameters relevant to the thermal noise is discussed. A measurement technique as well as experimental results of P- and N-MOSFET's of a 1.2 µm radiation hard CMOS process are presented. The calculated channel thermal noise coefficient gamma as in id2/Δf=4kT γ gdo agrees well with experimental data for effective device channel length as short as 1.7µm.

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1994-11-01
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Copyright 1994 IEEE. Reprinted from IEEE Transactions on Electron Devices, 1994, Volume 41, Issue 11, November 1994, pages 2069-2075. Publisher URL: 10.1109/16.333824 This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
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